提拉法生长BGS(Bi12GexSi1-xO20)系列低声速新单晶

提拉法生长BGS(Bi₁₂Ge_xSi_1-xO₂₀)系列低声速新单晶

摘要: 用提拉法,生长了BGS (Bi₁₂Ge_xSi_1-xO₂₀)系列中六种新的低声速单晶材料。晶体尺寸约为15×15×80mm³。BGS系列单晶属等轴晶系,23点群,空间群是I23或I2₁3二者之一,晶格常数为α≈10.11Å。密度在9.20×10³kg/m³（BG）至9.30×10³kg/m³（BS）之间。（100）方向的纵波声速v=3.7×10³m/s,与BG单晶和BS单晶相近。

Abstract: Six kinds of new single crystals of BGS (Bi₁₂ Ge_x Si(_1-x)O₂₀) series with lower sound velocity have been grown using Czochralski method, sizes about 15×15×80 mm³. The single crystals of BGS series belong to cubic system, 23 class, I23 or U2,3 space group. Their cell constants are α≈10.11Å.
The densities are between 9.20×10³ kg/m³ (BG) and 9.30×10³kg/m³(BS). The velocities of extensional wave in (100) direction are v=3.7×10³m/s approaching to that of BG and BS crystal.